Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor
نویسندگان
چکیده
منابع مشابه
Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) Technology for High Gain and Highly Efficient Power Amplifiers
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ژورنال
عنوان ژورنال: Journal of Alloys and Compounds
سال: 2020
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2020.154542